Thermal boundary resistance at interfaces between sapphire and indium
Identifieur interne : 000961 ( Main/Exploration ); précédent : 000960; suivant : 000962Thermal boundary resistance at interfaces between sapphire and indium
Auteurs : RBID : ISTEX:10909_1976_Article_BF00659062.pdfAbstract
The Kapitza thermal boundary resistanceRK has been measured above 1 K on several sapphire-indium boundaries prepared with different methods. By vapor-deposition of indium on sapphire and subsequent cold-welding with bulk indium, reproducible results were obtained. With the indium superconducting, we foundRK⋍T−3 within a certain temperature range, andRK(1K)=42–44 and 30–36 cm2 K/W for polished and rough sapphire surfaces, respectively. The calculation according to the acoustic mismatch theory yieldsRK(1K)≈20 cm2 K/W. Samples prepared by ultrasonic soldering also follow the relationRK⋍T−3 approximately, and giveRK(1K)=14–17 cm2 K/W. However, it is doubtful whether the calculation presuming a smooth boundary can be applied to the latter samples. Furthermore, we found that the method of vapor deposition and subsequent pouring on molten indium does not give good contacts. Moreover, the electronic contribution to the heat transfer across the boundary has been proved by ruling out other effects.
DOI: 10.1007/BF00659062
Links toward previous steps (curation, corpus...)
Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title>Thermal boundary resistance at interfaces between sapphire and indium</title><author><name>Curt Schmidt</name><affiliation wicri:level="3"><mods:affiliation>Institut für Experimentelle Kernphysik, Kernforschungszentrum Karlsruhe, Karlsruhe, West Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Institut für Experimentelle Kernphysik, Kernforschungszentrum Karlsruhe, Karlsruhe</wicri:regionArea><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Karlsruhe</region><settlement type="city">Karlsruhe</settlement></placeName></affiliation></author><author><name>Edgar Umlauf</name><affiliation wicri:level="1"><mods:affiliation>Zentralinstitut für Tieftemperaturforschung der Bayerischen Akademie der Wissenschaften, Garching, West Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Zentralinstitut für Tieftemperaturforschung der Bayerischen Akademie der Wissenschaften, Garching</wicri:regionArea><wicri:noRegion>Garching</wicri:noRegion><wicri:noRegion>Garching</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:10909_1976_Article_BF00659062.pdf</idno><date when="1976">1976</date><idno type="doi">10.1007/BF00659062</idno><idno type="wicri:Area/Main/Corpus">000624</idno><idno type="wicri:Area/Main/Curation">000624</idno><idno type="wicri:Area/Main/Exploration">000961</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">The Kapitza thermal boundary resistanceRK has been measured above 1 K on several sapphire-indium boundaries prepared with different methods. By vapor-deposition of indium on sapphire and subsequent cold-welding with bulk indium, reproducible results were obtained. With the indium superconducting, we foundRK⋍T−3 within a certain temperature range, andRK(1K)=42–44 and 30–36 cm2 K/W for polished and rough sapphire surfaces, respectively. The calculation according to the acoustic mismatch theory yieldsRK(1K)≈20 cm2 K/W. Samples prepared by ultrasonic soldering also follow the relationRK⋍T−3 approximately, and giveRK(1K)=14–17 cm2 K/W. However, it is doubtful whether the calculation presuming a smooth boundary can be applied to the latter samples. Furthermore, we found that the method of vapor deposition and subsequent pouring on molten indium does not give good contacts. Moreover, the electronic contribution to the heat transfer across the boundary has been proved by ruling out other effects.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="6d7265786808be92eb50940daa8da17233942b62"><titleInfo lang="eng"><title>Thermal boundary resistance at interfaces between sapphire and indium</title></titleInfo><name type="personal"><namePart type="given">Curt</namePart><namePart type="family">Schmidt</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Institut für Experimentelle Kernphysik, Kernforschungszentrum Karlsruhe, Karlsruhe, West Germany</affiliation></name><name type="personal"><namePart type="given">Edgar</namePart><namePart type="family">Umlauf</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Zentralinstitut für Tieftemperaturforschung der Bayerischen Akademie der Wissenschaften, Garching, West Germany</affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Kluwer Academic Publishers-Plenum Publishers, New York</publisher><dateCreated encoding="w3cdtf">1975-07-21</dateCreated><dateValid encoding="w3cdtf">2004-11-03</dateValid><copyrightDate encoding="w3cdtf">1976</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">The Kapitza thermal boundary resistanceRK has been measured above 1 K on several sapphire-indium boundaries prepared with different methods. By vapor-deposition of indium on sapphire and subsequent cold-welding with bulk indium, reproducible results were obtained. With the indium superconducting, we foundRK⋍T−3 within a certain temperature range, andRK(1K)=42–44 and 30–36 cm2 K/W for polished and rough sapphire surfaces, respectively. The calculation according to the acoustic mismatch theory yieldsRK(1K)≈20 cm2 K/W. Samples prepared by ultrasonic soldering also follow the relationRK⋍T−3 approximately, and giveRK(1K)=14–17 cm2 K/W. However, it is doubtful whether the calculation presuming a smooth boundary can be applied to the latter samples. Furthermore, we found that the method of vapor deposition and subsequent pouring on molten indium does not give good contacts. Moreover, the electronic contribution to the heat transfer across the boundary has been proved by ruling out other effects.</abstract><relatedItem type="series"><titleInfo type="abbreviated"><title>J Low Temp Phys</title></titleInfo><titleInfo><title>Journal of Low Temperature Physics</title><partNumber>Year: 1976</partNumber><partNumber>Volume: 22</partNumber><partNumber>Number: 5-6</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1976-03-01</dateIssued><copyrightDate encoding="w3cdtf">1976</copyrightDate></originInfo><subject usage="primary"><topic>Physics</topic><topic>Characterization and Evaluation Materials</topic><topic>Condensed Matter</topic><topic>Magnetism, Magnetic Materials</topic></subject><identifier type="issn">0022-2291</identifier><identifier type="issn">Electronic: 1573-7357</identifier><identifier type="matrixNumber">10909</identifier><identifier type="local">IssueArticleCount: 17</identifier><recordInfo><recordOrigin>Plenum Publishing Corporation, 1976</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF00659062</identifier><identifier type="matrixNumber">Art9</identifier><identifier type="local">BF00659062</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>597</start><end>611</end></extent></part><recordInfo><recordOrigin>Plenum Publishing Corporation, 1976</recordOrigin><recordIdentifier>10909_1976_Article_BF00659062.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV1/Data/Main/Exploration
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000961 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Exploration/biblio.hfd -nk 000961 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV1
|flux= Main
|étape= Exploration
|type= RBID
|clé= ISTEX:10909_1976_Article_BF00659062.pdf
|texte= Thermal boundary resistance at interfaces between sapphire and indium
}}
| This area was generated with Dilib version V0.5.81. |  |